中山大学学报自然科学版 ›› 2011, Vol. 50 ›› Issue (6): 35-38.

• 研究论文 • 上一篇    下一篇

Al-Y共掺杂ZnO透明导电薄膜制备及光电性能研究

阳生红1,蒋志洁1,张曰理1,2,汤 健1,王旭升1   

  1. (1. 中山大学 光电材料与技术国家重点实验室 // 物理科学与工程技术学院,广东 广州 510275;2. 山东大学 晶体材料国家重点实验室, 山东 济南 250100)
  • 收稿日期:2010-10-01 修回日期:1900-01-01 出版日期:2011-11-25 发布日期:2011-11-25
  • 通讯作者: 张曰理

Synthesis and Optoelectrical Properties of AlY Co-doped ZnO Transparent Conducting Thin Films

YANG Shenghong1, JIANG Zhijie1, ZHANG Yueli1,2, TANG Jian1, WANG Xusheng1   

  1. (1. State Key Laboratory of Optoelectronic Materials and Technologies // School of Physics & Engineering,〖JP〗 Sun Yatsen University, Guangzhou 510275 ,China; 2. State Key laboratory of Crystal Material, Shandong University, Jinan, 250100,China)
  • Received:2010-10-01 Revised:1900-01-01 Online:2011-11-25 Published:2011-11-25

摘要: 采用溶胶凝胶法,在玻璃衬底上制备出Al-Y共掺杂的ZnO透明导电薄膜。X射线衍射(XRD)表明,Al-Y共掺杂ZnO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向。制备的Al-Y共掺杂ZnO薄膜电阻率最小值为1.63×102 Ω·cm,在可见光区(400-800 nm)平均透过率超过85 %。

关键词: Al-Y共掺杂, ZnO透明导电薄膜, 溶胶-凝胶

Abstract: The Al-Y co-doped ZnO tranparent conducting thin films were prepared on glass by Sol-Gel method. X-ray diffraction (XRD) showed they have hexagonal wurtzite structure with a C-axis preferred orientation. Its minimum resistivity is 1.63×102 Ω·cm, and the average transmittance in the visible region (400-800 nm) is beyond 85 %.

Key words: Al-Y co-doping, ZnO tranparent conducting film, Sol-Gel method

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