中山大学学报自然科学版 ›› 2017, Vol. 56 ›› Issue (3): 1-7.

• 研究论文 •    下一篇

掺硼 p 型晶体硅太阳电池B-O缺陷致光衰及其抑制的研究进展

艾斌1,2,邓幼俊2   

  1. 1.中山大学材料科学与工程学院,广东 广州 510006;
    2.中山大学物理学院∥广东省光伏技术重点实验室,广东 广州 510006
  • 收稿日期:2016-10-10 出版日期:2017-05-25 发布日期:2017-05-25
  • 通讯作者: 艾斌(1973年生),男;研究方向:太阳能材料与太阳电池;E-mail: stsab@mail.sysu.edu.cn

Research progress on LID caused by B-O defects and its suppression for B-doped p-type crystalline silicon solar cells

AI Bin1,2,DENG Youjun2   

  1. 1. School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006,China;
    2. Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics, Sun Yat-sen University, Guangzhou 510006,China
  • Received:2016-10-10 Online:2017-05-25 Published:2017-05-25

摘要:

掺硼p型晶体硅太阳电池一直牢牢占据着光伏市场的主导地位,但硼-氧(B-O)缺陷引起的光衰(LID: Light induced degradation)极大地限制了它的发展。最新的对太阳电池加热同时注入少数载流子的BO缺陷“复原”(regeneration)技术有望彻底解决掺硼p型晶体硅太阳电池的LID问题。鉴于掺硼p型晶体硅太阳电池LID及其抑制措施的研究对提高晶体硅太阳电池性能表现的长期稳定性有重要作用,回顾了近年在掺硼p型晶体硅太阳电池LID及其抑制措施方面的研究进展,并对最新发展出的B-O缺陷“复原”技术给予了重点介绍。

关键词: 晶体硅太阳电池, 硼-氧缺陷, 光衰, 复原

Abstract:

Although boron-doped p-type crystalline silicon solar cells have been firmly occupying the dominant share in PV market, the light induced degradation (LID) caused by boron-oxygen (B-O) defects greatly limits their development. Newly-developed B-O defects regeneration technology combining minority carriers injection and heating has the potential to completely solve the LID problems of boron-doped p-type crystalline silicon solar cells. Considering that the research work on LID and its suppression measure is of a great importance to improve long term stability of todays mainstream crystalline silicon solar cells, the authors review the recent research progress on LID and its inhibition method of boron-doped p-type crystalline silicon solar cells, and emphatically introduce the newly-developed B-O defects regeneration technology.

Key words: crystalline silicon solar cells, B-O defects, light induced degradation (LID), regeneration

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